1 www.irf.com ? 2013 international rectifier august 07, 2013 hexfet ? power mosfet base part number package type standard pack orderable part number ? ? form quantity IRFH4210pbf pqfn 5mm x 6 mm tape and reel 4000 IRFH4210trpbf v dss 25 v r ds(on) max (@ v gs = 10v) 1.10 ? (@ v gs = 4.5v) 1.35 qg (typical) ? ? ? nc i d (@t c (bottom) = 25c) 245 ? a m ? ? ? ? ? pqfn 5x6 mm features benefits low r dson (<1.10m ? ) lower conduction losses low thermal resistance to pcb (<1.2c/w) enable better thermal dissipation low profile (<0.9 mm) results in increased power density industry-standard pinout ?? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability notes ? through ? are on page 8 absolute maximum ratings ?? parameter max. units v gs gate-to-source voltage 20 v i d @ t a = 25c continuous drain current, v gs @ 10v 45 a i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v 245 ? i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v 155 ? i dm pulsed drain current ? 400 p d @t a = 25c power dissipation ? 3.6 w p d @t c(bottom) = 25c power dissipation ? 104 linear derating factor ? 0.029 w/c t j operating junction and -55 to + 150 c t stg storage temperature range applications ?? synchronous rectifier mosfet fo r synchronous buck converters ?? secondary synchronous rectifier mosfet for isolated dc-dc converters ?? active oring and hot swap ?? battery operated dc motor inverters fast ir fet? IRFH4210pbf downloaded from: http:///
? IRFH4210pbf 2 www.irf.com ? 2013 international rectifier august 07, 2013 d s g static @ t j = 25c (unless otherwise specified) ???? parameter min. typ. max. units conditions bv dss drain-to-source breakdown voltage 25 CCC CCC v v gs = 0v, i d = 250a ? bv dss / ? t j breakdown voltage temp. coefficient CCC 21 CCC mv/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance CCC 0.85 1.10 m ? v gs = 10v, i d = 50a ? CCC 1.10 1.35 v gs = 4.5v, i d = 50a ? v gs(th) gate threshold voltage 1.1 1.6 2.1 v v ds = v gs , i d = 100a ? v gs(th) gate threshold voltage coefficient CCC -6.0 CCC mv/c i dss drain-to-source leakage current CCC CCC 1.0 a v ds = 20v, v gs = 0v i gss gate-to-source forward leakage CCC CCC 100 na v gs = 20v gate-to-source reverse leakage CCC CCC -100 v gs = -20v gfs forward transconductance 251 CCC CCC s v ds = 10v, i d = 50a q g total gate charge CCC 74 CCC nc v gs = 10v, v ds = 13v, i d = 50a q g total gate charge CCC 36 54 q gs1 pre-vth gate-to-source charge CCC 9.4 CCC ? v ds = 13v q gs2 post-vth gate-to-source charge CCC 4.6 CCC nc v gs = 4.5v q gd gate-to-drain charge CCC 13 CCC ? i d = 50a q godr gate charge overdrive CCC 9.0 CCC ? q sw switch charge (q gs2 + q gd ) CCC 17.6 CCC ? q oss output charge CCC 34 CCC nc v ds = 16v, v gs = 0v r g gate resistance CCC 1.2 CCC ? ? t d(on) turn-on delay time CCC 20 CCC v dd = 13v, v gs = 4.5v t r rise time CCC 44 CCC ns i d = 50a t d(off) turn-off delay time CCC 24 CCC ? r g =1.8 ? t f fall time CCC 15 CCC ? c iss input capacitance CCC 4760 CCC v gs = 0v c oss output capacitance CCC 1310 CCC pf v ds = 13v c rss reverse transfer capacitance CCC 370 CCC ? ? = 1.0mhz avalanche characteristics ???? parameter typ. max. e as single pulse avalanche energy ? CCC 195 i ar avalanche current ? CCC 50 diode characteristics ???? parameter min. typ. max. units conditions i s continuous source current CCC CCC 245 ? a mosfet symbol (body diode) showing the i sm pulsed source current CCC CCC 400 integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC CCC 1.0 v t j = 25c, i s = 50a, v gs = 0v ? t rr reverse recovery time CCC 26 39 ns t j = 25c, i f = 50a, v dd = 13v q rr reverse recovery charge CCC 51 77 nc di/dt = 300a/s ? ??? parameter typ. max. units r ? jc (bottom) junction-to-case ? CCC 1.2 r ? jc (top) junction-to-case ? CCC 21 c/w r ? ja junction-to-ambient ? CCC 35 r ? ja (<10s) junction-to-ambient ? CCC 21 thermal resistance downloaded from: http:///
? IRFH4210pbf 3 www.irf.com ? 2013 international rectifier august 07, 2013 fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs . gate-to-source voltage fig 3. typical transfer characteristics fig 2. typical output characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 3.5v 3.1v 2.9v 2.7v bottom 2.5v ? 60s pulse width tj = 25c 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v ? 60s pulse width tj = 150c vgs top 10v 5.0v 4.5v 3.5v 3.1v 2.9v 2.7v bottom 2.5v 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v gs , gate-to-source voltage (v) 1.0 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v ? 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 50a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 102030405060708090100 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 20v v ds = 13v i d = 50a downloaded from: http:///
? IRFH4210pbf 4 www.irf.com ? 2013 international rectifier august 07, 2013 fig 8. maximum safe operating area fig 7. typical source-drain diode forward voltage fig 9. maximum drain current vs. case temperature fig 10. threshold voltage vs. temperature fig 11. maximum effective transient thermal impedance, junction-to-case 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t c , case temperature (c) 0 50 100 150 200 250 i d , d r a i n c u r r e n t ( a ) limited by package -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.8 1.2 1.6 2.0 2.4 2.8 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 100a i d = 250a i d = 1.0ma i d = 1a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc limited by package downloaded from: http:///
? IRFH4210pbf 5 www.irf.com ? 2013 international rectifier august 07, 2013 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0.0 1.0 2.0 3.0 4.0 5.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 50a t j = 25c t j = 125c fig 12. onC resistance vs. gate voltage fig 13. maximum avalanche energy vs. drain current fig 14. typical avalanche current vs. pulsewidth 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 600 700 800 900 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 13a 25a bottom 50a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 125c and tstart =25c (single pulse) downloaded from: http:///
? IRFH4210pbf 6 www.irf.com ? 2013 international rectifier august 07, 2013 fig 15. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 18. gate charge test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 19. gate charge waveform fig 17a. switching time test circuit fig 17b. switching time waveforms fig 16a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v t p v (br)dss i as fig 16b. unclamped inductive waveforms downloaded from: http:///
? IRFH4210pbf 7 www.irf.com ? 2013 international rectifier august 07, 2013 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ pqfn 5x6 outline "b" package details xxxx xywwx xxxxx international rectifier logo part number (4 or 5 digits) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) pqfn 5x6 outline "b" part marking for more information on board mounting, including footprint and stencil recommendation, please refer to application note an-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf for more information on package inspection techniques, please refer to application note an-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf downloaded from: http:///
? IRFH4210pbf 8 www.irf.com ? 2013 international rectifier august 07, 2013 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ pqfn 5x6 outline "b" tape and reel ? qualification standards can be found at international rectifiers web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standard at the time of product release. notes: ? ? repetitive rating; pulse width limited by max. junction temperature. ? starting t j = 25c, l = 0.156mh, r g = 50 ? , i as = 50a. ? pulse width ? 400s; duty cycle ? 2%. ? r ? is measured at t j of approximately 90c. ? when mounted on 1 inch square pcb (fr-4). please refer to an-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf ? calculated continuous current based on maximum allowable junction temperature. package is limited to 100a by production test capability. qualification information ? ? qualification level ? industrial ? (per jedec jesd47f ?? guidelines) moisture sensitivity level pqfn 5mm x 6mm msl1 (per jedec j-std-020d ??) rohs compliant yes note: for the most current drawing please refer to ir website at http://www.irf.com/package/ revision history date comments ?? updated package 3d drawing, on page 1. ?? updated current rating based on max rati ng not limited by package, on pages 1 and 2. 08/07/13 ? ?? added "fast ir fet?" above part number on page1 05/13/2013 ? downloaded from: http:///
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